JPH06456Y2 - 単結晶引上装置のシール構造 - Google Patents
単結晶引上装置のシール構造Info
- Publication number
- JPH06456Y2 JPH06456Y2 JP9982289U JP9982289U JPH06456Y2 JP H06456 Y2 JPH06456 Y2 JP H06456Y2 JP 9982289 U JP9982289 U JP 9982289U JP 9982289 U JP9982289 U JP 9982289U JP H06456 Y2 JPH06456 Y2 JP H06456Y2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- heater
- single crystal
- electrode
- bellows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9982289U JPH06456Y2 (ja) | 1989-08-29 | 1989-08-29 | 単結晶引上装置のシール構造 |
EP19900309418 EP0416799B1 (en) | 1989-08-29 | 1990-08-29 | A single crystal pulling apparatus |
DE1990616317 DE69016317T2 (de) | 1989-08-29 | 1990-08-29 | Einkristallziehungsapparat. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9982289U JPH06456Y2 (ja) | 1989-08-29 | 1989-08-29 | 単結晶引上装置のシール構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0341862U JPH0341862U (en]) | 1991-04-22 |
JPH06456Y2 true JPH06456Y2 (ja) | 1994-01-05 |
Family
ID=14257524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9982289U Expired - Lifetime JPH06456Y2 (ja) | 1989-08-29 | 1989-08-29 | 単結晶引上装置のシール構造 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0416799B1 (en]) |
JP (1) | JPH06456Y2 (en]) |
DE (1) | DE69016317T2 (en]) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102400232A (zh) * | 2011-11-15 | 2012-04-04 | 镇江环太硅科技有限公司 | 一种单晶硅生长炉用石墨/炭毡复合电极 |
CN103334153B (zh) * | 2013-06-26 | 2015-07-15 | 英利能源(中国)有限公司 | 一种单晶炉 |
CN107513759B (zh) * | 2016-06-15 | 2019-11-19 | 上海新昇半导体科技有限公司 | 一种单晶硅生长炉 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3679370A (en) * | 1970-07-31 | 1972-07-25 | Western Electric Co | Crystal grower with expandable chamber |
US3953281A (en) * | 1974-06-27 | 1976-04-27 | International Business Machines Corporation | Method and system for growing monocrystalline ingots |
-
1989
- 1989-08-29 JP JP9982289U patent/JPH06456Y2/ja not_active Expired - Lifetime
-
1990
- 1990-08-29 EP EP19900309418 patent/EP0416799B1/en not_active Expired - Lifetime
- 1990-08-29 DE DE1990616317 patent/DE69016317T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0416799A2 (en) | 1991-03-13 |
DE69016317D1 (de) | 1995-03-09 |
EP0416799A3 (en) | 1991-07-17 |
EP0416799B1 (en) | 1995-01-25 |
DE69016317T2 (de) | 1995-08-03 |
JPH0341862U (en]) | 1991-04-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |